Effective Surface Recombination of p+ Layers Doped Using Ion Implantation or Surface Deposited B Sources
نویسندگان
چکیده
منابع مشابه
The microstructure of Si surface layers after plasma-immersion He+ ion implantation and subsequent thermal annealing1
The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He+ plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer st...
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ژورنال
عنوان ژورنال: Energy Procedia
سال: 2016
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2016.07.004